Low Power High Gain CMOS LNA for WLAN and ISM Band Applications
نویسندگان
چکیده
A 1.8V, 2.4 GHz CMOS low noise amplifier (LNA) is proposed to be used in front end receiver of Wireless LAN (WLAN) and Industrial Scientific and Medicine (ISM) band. The circuit is simulated in tsmc 180nm V 3.2. The optimization for the width of the CMOS is done taking into consideration parameters viz. noise figure (NF), Power consumption, gain, stability and linearity. The matching of input capacitance and that of output capacitance for a particular width of the CMOS is used to obtain tradeoffs between the design parameters. The LNA power gain(S21) is 24.60 dB, noise figure is 1.26dB, reverse isolation is -35.3 dB, input return loss (S11) is 10.41 dB, output return loss (S22) is -11.28 dB and the power consumption is 2.26 mW from a single 1.8 V power supply. The main features of proposed design of LNA are low noise figure and low power consumption without affecting the gain in the range of consideration. Keywords—CMOS, low noise amplifier (LNA), input matching, Noise Figure, Power gain, Stability, Wireless LAN
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